直接型半导体中子探测器的研究进展及展望

摘要/Abstract

摘要： 直接型半导体中子探测器具有体积小、理论探测效率100%及器件结构简单等显著优势,是未来半导体中子探测器重点发展方向。当前,具有明显中子响应且适用于制备直接型半导体中子探测器的新型报道材料有h-BN、LiInSe₂及LiInP₂Se₆三种。本文介绍国内外基于这三种材料类型直接型半导体中子探测器研究的最新进展,主要包括:晶体的制备、表征及生长工艺的优化;晶体的电学特性及载流子传输能力;探测器结构设计及中子探测性能测试等方面。同时对研究现状及发展趋势进行了总结,并在此基础上对直接型半导体中子探测器的发展前景进行了展望。

关键词: 直接型半导体中子探测器, 晶体制备, 电学特性, 器件结构, 中子探测能力

Abstract: Direct semiconductor neutron detectors have significant advantages such as small volume, theoretical detection efficiency of 100%, and simple device structure, making them a key direction for the future development of semiconductor neutron detectors. Currently, novel materials with distinct neutron response capabilities suitable for fabricating direct-type semiconductor neutron detectors include h-BN, LiInSe₂ and LiInP₂Se₆. This paper provides a detailed review of the latest advancements in research on direct semiconductor neutron detectors based on h-BN, LiInSe₂ and LiInP₂Se₆. The review includes the following aspects: crystal growth, characterization and optimization of growth processes; electrical properties of crystals and carrier transport capability; detector structure design and neutron detection performance testing. This paper also summarizes the current research status and development trends, and offers an outlook on the future of direct semiconductor neutron detectors.

Key words: direct semiconductor neutron detectors, crystal growth, electrical properties, device structure, neutron detection performance

中图分类号:

TL816

王林靖, 王川, 李华, 李德源, 陈法国, 刘立业, 张鹏鹏. 直接型半导体中子探测器的研究进展及展望[J]. 辐射防护, 2025, 45(5): 445-458.

WANG Linjing, WANG Chuan, LI Hua, LI Deyuan, CHEN Faguo, LIU Liye, ZHANG Pengpeng. Research progress and prospects of direct semiconductor neutron detectors[J]. RADIATION PROTECTION, 2025, 45(5): 445-458.

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