辐射防护 ›› 2021, Vol. 41 ›› Issue (5): 439-446.

• 辐射防护方法 • 上一篇    下一篇

钙钛矿太阳能光伏电池及其抗质子辐照性能的仿真研究

李文英1, 赵鹏2   

  1. 1.西安理工大学 西北旱区生态水利国家重点实验室,西安 740048;
    2.西安电子科技大学 微电子学院,西安 710071
  • 收稿日期:2021-05-18 出版日期:2021-09-20 发布日期:2021-11-26
  • 通讯作者: 赵鹏。E-mail: pengzhao_chn@163.com
  • 作者简介:李文英(1978—),女,2001年本科毕业于西安理工大学给水排水工程专业,2007年毕业于西安理工大学环境工程专业,获硕士学位,2012年毕业于西安建筑科技大学市政工程专业,获博士学位。E-mail: 331644417@qq.com
  • 基金资助:
    雅砻江流域大规模风光水互补清洁能源基地的开发、运行、管理关键问题研究,国家自然科学基金(U1965202)。

Study on perovskite solar cell and the tolerance to high-energy proton irradiation

LI Wenying1, ZHAO Peng2   

  1. 1. State Key Laboratory of Eco-Hydraulics in Northwest Arid Region of China, Xi'an University of Technology, Xi'an 740048;
    2. School of Microelectronics, Xidian University, Xi'an 710071
  • Received:2021-05-18 Online:2021-09-20 Published:2021-11-26

摘要: 由于具有低成本、高性能等优点,目前钙钛矿太阳能电池被广泛关注。此外,SnO2具有禁带宽度适中、载流子迁移率高、减反射性能优异等优点,因此被广泛用作电子传输层。本工作主要分析电子传输层厚度、空穴传输层厚度、钙钛矿吸收层厚度、环境温度、串联电阻以及并联电阻对器件性能的影响。研究结果表明,最优的SnO2电子传输层厚度为40 nm,最优的Spiro-OMeTAD空穴传输层厚度为70 nm。随着钙钛矿吸收层厚度增加,太阳能电池的光电转化效率不断提高,当钙钛矿吸收层厚度达到650 nm时光电转化效率达到饱和。此外,环境温度的上升导致填充因子以及短路电流的下降,从而使得器件性能退化。太阳能电池的寄生串联电阻和并联电阻分别会导致短路电流和开路电压下降。最后,我们的仿真结果表明,FTO/SnO2/CH3NH3PbI3/Spiro-OMeTAD/Ag结构的钙钛矿太阳能电池可以耐受高达1013 cm-2的质子束辐照。本研究为发展高性能钙钛矿太阳能电池及其空间应用提供了重要的理论指导。

关键词: 钙钛矿, 太阳能电池, 仿真模拟, 抗质子辐照

Abstract: The perovskite solar cells attracted great attention owing to their low cost and high performance. SnO2 as electron transport layer has been mostly used in the perovskite solar cells due to its excellent properties, such as good anti-reflection, suitable band gap, and high electron mobility. In this study, electron transport layer thickness, hole transport layer thickness, perovskite layer thickness, temperature, shunt resistance, and series resistance are investigated on the performance of perovskite solar cells. According to the results, the optimal thickness of SnO2 layer, Spiro-OMeTAD layer, and perovskite layer are 40 nm, 70 nm, and 650 nm respectively. In addition, with the environment temperature increasing, fill factor and short circuit current density keep decreasing. Moreover, shunt resistance and series resistance will deteriorate open circuit voltage and short circuit current density respectively. Finally, the proton irradiation resistance of FTO/SnO2/CH3NH3PbI3/Spiro-OMeTAD/Ag can reach up to 1013 cm-2. This work will provide guidance to develop high performance perovskite solar cells and the application in space environment.

Key words: perovskite, solar cell, numerical simulation, tolerance to high-energy proton irradiation

中图分类号: 

  • TN389