金属氧化物半导体场效应晶体管中总剂量效应导致的阈值电压漂移研究现状

摘要/Abstract

摘要： 为了研发可用于核与辐射应急响应与准备的机器人,对比了多种具有不同结构和生产工艺的金属氧化物半导体场效应晶体管(MOSFET)由于总剂量效应(TID)导致的阈值电压漂移(ΔV_th)。注意到了栅宽和栅长对器件耐辐射能力的影响在体CMOS器件和纳米线(NW)MOSFET器件之间、高的和低的工艺节点之间的不同,并从辐射诱导的窄通道效应(RINCE)和辐射诱导的短通道效应(RISCE)两方面解释了这种区别的原因。发现近年来前沿的一些研究在考虑辐射效应时,修正了负偏压不稳定性(NBTI)的影响。并讨论了几种新型器件包括锗沟道、氮化镓沟道管和具有特殊几何布局的晶体管。此外,介绍了计算机辅助设计技术(TCAD)在几种新型场效应管的机理研究和建模验证中的应用。

关键词: 总剂量效应(TID), 阈值电压漂移, 金属氧化物半导体场效应晶体管(MOSFET), TCAD

Abstract: In the aim of helping the development of robots used in radiological emergency preparedness and response,the TID effects on the threshold voltage shift(ΔV_th) of different kinds of MOSFET with different geometry and different scaling technology was compared.The different gate width and the length dependent between bulk CMOS process and NW MOSFET is noticed.And the TID effects on ΔV_th of several kinds of new devices such as Ge-channel and GaN channel MOSFETs and MOSFETs with new layout geometry are described which can be investigated more deeply.In addition,TCAD simulation is introduced to be used in both mechanism investigation and modeling verification.

Key words: total ionizing dose (TID), threshold voltage shift, MOSFET, TCAD

中图分类号:

TL75

刘一宁, 王任泽, 杨亚鹏, 王宁, 冯宗洋, 贾林胜, 张建岗, 李国强. 金属氧化物半导体场效应晶体管中总剂量效应导致的阈值电压漂移研究现状[J]. 辐射防护, 2020, 40(6): 663-670.

LIU Yining, WANG Renze, YANG Yapeng, WANG Ning, FENG Zongyang, JIA Linsheng, ZHANG Jiangang, LI Quoqiang. A review of total ionizing dose (TID) inducedshift of threshold voltage of MOSFETs[J]. RADIATION PROTECTION, 2020, 40(6): 663-670.

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