Abstract: The perovskite solar cells attracted great attention owing to their low cost and high performance. SnO₂ as electron transport layer has been mostly used in the perovskite solar cells due to its excellent properties, such as good anti-reflection, suitable band gap, and high electron mobility. In this study, electron transport layer thickness, hole transport layer thickness, perovskite layer thickness, temperature, shunt resistance, and series resistance are investigated on the performance of perovskite solar cells. According to the results, the optimal thickness of SnO₂ layer, Spiro-OMeTAD layer, and perovskite layer are 40 nm, 70 nm, and 650 nm respectively. In addition, with the environment temperature increasing, fill factor and short circuit current density keep decreasing. Moreover, shunt resistance and series resistance will deteriorate open circuit voltage and short circuit current density respectively. Finally, the proton irradiation resistance of FTO/SnO₂/CH₃NH₃PbI₃/Spiro-OMeTAD/Ag can reach up to 10¹³ cm^-2. This work will provide guidance to develop high performance perovskite solar cells and the application in space environment.

Key words: perovskite, solar cell, numerical simulation, tolerance to high-energy proton irradiation