金属氧化物半导体场效应晶体管中总剂量效应导致的阈值电压漂移研究现状

Abstract

Abstract: In the aim of helping the development of robots used in radiological emergency preparedness and response,the TID effects on the threshold voltage shift(ΔV_th) of different kinds of MOSFET with different geometry and different scaling technology was compared.The different gate width and the length dependent between bulk CMOS process and NW MOSFET is noticed.And the TID effects on ΔV_th of several kinds of new devices such as Ge-channel and GaN channel MOSFETs and MOSFETs with new layout geometry are described which can be investigated more deeply.In addition,TCAD simulation is introduced to be used in both mechanism investigation and modeling verification.

Key words: total ionizing dose (TID), threshold voltage shift, MOSFET, TCAD

CLC Number:

TL75

LIU Yining, WANG Renze, YANG Yapeng, WANG Ning, FENG Zongyang, JIA Linsheng, ZHANG Jiangang, LI Quoqiang. A review of total ionizing dose (TID) inducedshift of threshold voltage of MOSFETs[J].RADIATION PROTECTION, 2020, 40(6): 663-670.

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A review of total ionizing dose (TID) inducedshift of threshold voltage of MOSFETs

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