直接型半导体中子探测器的研究进展及展望

Abstract

Abstract: Direct semiconductor neutron detectors have significant advantages such as small volume, theoretical detection efficiency of 100%, and simple device structure, making them a key direction for the future development of semiconductor neutron detectors. Currently, novel materials with distinct neutron response capabilities suitable for fabricating direct-type semiconductor neutron detectors include h-BN, LiInSe₂ and LiInP₂Se₆. This paper provides a detailed review of the latest advancements in research on direct semiconductor neutron detectors based on h-BN, LiInSe₂ and LiInP₂Se₆. The review includes the following aspects: crystal growth, characterization and optimization of growth processes; electrical properties of crystals and carrier transport capability; detector structure design and neutron detection performance testing. This paper also summarizes the current research status and development trends, and offers an outlook on the future of direct semiconductor neutron detectors.

Key words: direct semiconductor neutron detectors, crystal growth, electrical properties, device structure, neutron detection performance

CLC Number:

TL816

WANG Linjing, WANG Chuan, LI Hua, LI Deyuan, CHEN Faguo, LIU Liye, ZHANG Pengpeng. Research progress and prospects of direct semiconductor neutron detectors[J].RADIATION PROTECTION, 2025, 45(5): 445-458.

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Research progress and prospects of direct semiconductor neutron detectors

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