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A Method of Fault Tolerant Design for Memory

ZHAO Yunfu, HUA Gengxin   

  1. Beijing Institute of Control Engineering, Beijing 100190,China
  • Received:1900-01-01 Revised:1900-01-01 Online:2009-06-26 Published:2009-06-26

Abstract: Single Event Upsets (SEU) often occur when a memory works in the space radiation environment. An Hsiao code-based Error Detect and Correct (EDAC) circuit is designed. By reusing the encode and decode circuit, occupied circuit area is decrease further. Compared with the Extended Hamming Code, the area is decreased by nearly 50 percent and the speed is improved by nearly 20 percent in my design. A novelty method to complete auto write-back function for single error is adopted in this paper. A Triple Modular Redundancy (TMR) design for control registers is used to guarantee correct operation of a memory. Simulation results illustrate feasibility and superiority of the proposed design.

Key words: single event upsets, error detect and correct, Hsiao code, triple modular redundancy

CLC Number: 

  • V4